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 ?2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com EGP30A - EGP30K Rev. A EGP30A - EGP30K 3.0 Ampere Glass Passivated High Efficiency Rectifiers July 2007 EGP30A - EGP30K 3.0 Ampere Glass Passivated High Efficiency Rectifiers Features ? Glass passivated cavity-free junction ? High surge current capability ? Low leakage current ? Superfast recovery time for high efficiency ? Low forward voltage, high current capability Absolute Maximum Ratings* Ta = 25 °C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta = 25 °C unless otherwise noted * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Symbol Parameter Value Units IO Average Rectified Current .375 " lead length @ TL = 55°C 3.0 A if(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 125 A PD Total Device Dissipation Derate above 25°C 6.25 50 W mW°C RθJA Thermal Resistance, Junction to Ambient 20 °C/W RθJL Thermal Resistance, Junction to Lead 8.5 °C/W TJ, TSTG Junction and Storage Temperature Range -65 ~ 150 °C Parameter Device Units 30A 30B 30C 30D 30F 30G 30J 30K Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V Maximum RMS Voltage 35 70 105 140 210 280 420 560 V DC Reverse Voltage (Rated VR) 50 100 150 200 300 400 600 800 V Maximum Reverse Current @ rated V R TA = 25°C T A = 125°C 5.0 100 μA μA Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 50 75 nS Maximum Forward Voltage @ 3.0 A 0.95 1.25 1.7 V Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 95 75 pF DO-201AD Glass case COLOR BAND DENOTES CATHODE |